SQJ454EP-T1_GE3 vs SQJ456EP-T1_GE3 vs SQJ456EP

 
PartNumberSQJ454EP-T1_GE3SQJ456EP-T1_GE3SQJ456EP
DescriptionMOSFET 200V Vds PowerPAK AEC-Q101 QualifiedMOSFET 100V 32A 83W AEC-Q101 Qualified
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8L-4PowerPAK-SO-8L-4-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage200 V100 V-
Id Continuous Drain Current13 A32 A-
Rds On Drain Source Resistance145 mOhms21 mOhms-
Vgs th Gate Source Threshold Voltage2 V2.5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge56 nC63 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation68 W83 W-
ConfigurationSingleSingle-
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
SeriesSQSQ-
BrandVishay / SiliconixVishay / Siliconix-
Fall Time8 ns8 ns-
Product TypeMOSFETMOSFET-
Rise Time5 ns12 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time33 ns35 ns-
Typical Turn On Delay Time14 ns14 ns-
Unit Weight0.017870 oz0.017870 oz-
Channel Mode-Enhancement-
Transistor Type-1 N-Channel-
Forward Transconductance Min-36 S-
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