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| PartNumber | SQJ910AEP-T1_GE3 | SQJ900EP-T1-GE3 | SQJ910AEP |
| Description | MOSFET Dual N-Channel 30V AEC-Q101 Qualified | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-SO-8L-4 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 30 A | - | - |
| Rds On Drain Source Resistance | 5.8 mOhms, 5.8 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 39 nC, 39 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 48 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | - | - |
| Series | SQ | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 72 S, 72 S | - | - |
| Fall Time | 7 ns, 7 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 3 ns, 3 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 27 ns, 27 ns | - | - |
| Typical Turn On Delay Time | 11 ns, 11 ns | - | - |
| Unit Weight | 0.017870 oz | - | - |