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| PartNumber | SQJ952EP-T1_GE3 | SQJ951EP-T1_GE3 | SQJ951EP |
| Description | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | MOSFET Dual P-Channel 30V AEC-Q101 Qualified | |
| Manufacturer | Vishay | Vishay | Vishay Siliconix |
| Product Category | MOSFET | MOSFET | FETs - Arrays |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-SO-8L-4 | PowerPAK-SO-8L-4 | - |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 30 V | - |
| Id Continuous Drain Current | 23 A | 30 A | - |
| Rds On Drain Source Resistance | 12 mOhms | 14 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 2.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 30 nC, 30 nC | 50 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 25 W | 56 W | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Tape & Reel (TR) |
| Height | 1.04 mm | - | - |
| Length | 6.15 mm | - | - |
| Series | SQ | SQ | Automotive, AEC-Q101, TrenchFETR |
| Transistor Type | 2 N-Channel | 2 P-Channel | 2 P-Channel |
| Width | 5.13 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 68 S, 68 S | 18 S | - |
| Fall Time | 9 ns, 9 ns | 28 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 6 ns, 6 ns | 12 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 25 ns, 25 ns | 39 ns | - |
| Typical Turn On Delay Time | 9 ns, 9 ns | 12 ns | - |
| Unit Weight | 0.017870 oz | 0.017870 oz | - |
| Package Case | - | - | PowerPAKR SO-8 Dual |
| Operating Temperature | - | - | -55°C ~ 175°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | PowerPAKR SO-8 Dual |
| FET Type | - | - | 2 P-Channel (Dual) |
| Power Max | - | - | 56W |
| Drain to Source Voltage Vdss | - | - | 30V |
| Input Capacitance Ciss Vds | - | - | 1680pF @ 10V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 30A |
| Rds On Max Id Vgs | - | - | 17 mOhm @ 7.5A, 10V |
| Vgs th Max Id | - | - | 2.5V @ 250μA |
| Gate Charge Qg Vgs | - | - | 50nC @ 10V |