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| PartNumber | SQJB00EP-T1_GE3 | SQJB40EP-T1_GE3 | SQJB40EP |
| Description | MOSFET N-Ch 60V Vds AEC-Q101 Qualified | MOSFET Dual N-Ch 40V Vds AEC-Q101 Qualified | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-SO-8L-4 | PowerPAK-SO-8L-4 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 40 V | - |
| Id Continuous Drain Current | 30 A | 30 A | - |
| Rds On Drain Source Resistance | 10.5 mOhms | 6.3 mOhms, 6.3 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 1.2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 35 nC, 35 nC | 35 nC, 35 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 48 W | 34 W | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Series | SQ | SQ | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 36 S, 36 S | 48 S, 48 S | - |
| Fall Time | 22 ns, 22 ns | 15 ns, 15 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 3 ns, 3 ns | 20 ns, 20 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 23 ns, 23 ns | 18 ns, 18 ns | - |
| Typical Turn On Delay Time | 13 ns, 13 ns | 7 ns, 7 ns | - |
| Unit Weight | 0.017870 oz | 0.017870 oz | - |
| Height | - | 1.04 mm | - |
| Length | - | 6.15 mm | - |
| Width | - | 5.13 mm | - |