SQM40N10-30_GE3 vs SQM40N10-30 vs SQM40N15-38

 
PartNumberSQM40N10-30_GE3SQM40N10-30SQM40N15-38
DescriptionMOSFET 100V 40A 107W AEC-Q101 Qualified
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current40 A--
Rds On Drain Source Resistance23 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge62 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation107 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFET--
PackagingReel--
SeriesSQ--
Transistor Type1 N-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min52 S--
Fall Time5 ns--
Product TypeMOSFET--
Rise Time5 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time23 ns--
Typical Turn On Delay Time12 ns--
Unit Weight0.050717 oz--
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