SQS401EN-T1_GE3 vs SQS400EN-T1-GE3 vs SQS401EN

 
PartNumberSQS401EN-T1_GE3SQS400EN-T1-GE3SQS401EN
DescriptionMOSFET 40V 16A 62.5W AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 78-SQS840EN-T1_GE3
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-1212-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current16 A--
Rds On Drain Source Resistance29 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge21.2 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation62.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFET--
PackagingReel--
Height1.04 mm--
Length3.3 mm--
SeriesSQ--
Width3.3 mm--
BrandVishay / Siliconix--
Forward Transconductance Min12 S--
Fall Time10.2 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time36.5 ns--
Typical Turn On Delay Time11 ns--
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