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| PartNumber | SQS415ENW-T1_GE3 | SQS411ENW-T1_GE3 | SQS410EN-T1-GE3 |
| Description | MOSFET -40V Vds 20V Vgs POWERPAK 1212-8W | MOSFET -40V Vds 20V Vgs POWERPAK 1212-8W | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-1212-8W | PowerPAK-1212-8W | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 16 A | 16 A | - |
| Rds On Drain Source Resistance | 16.1 mOhms | 27.3 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 1.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 82 nC | 50 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 62.5 W | 53.6 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Transistor Type | 1 P-Channel TrenchFET Power MOSFET | 1 P-Channel TrenchFET Power MOSFET | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 30 S | 23 S | - |
| Fall Time | 16 ns | 6.4 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 3.6 ns | 3 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 64 ns | 39.6 ns | - |
| Typical Turn On Delay Time | 11.8 ns | 10.5 ns | - |