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| PartNumber | SQV120N06-4m7L_GE3 | SQV120N06-4M7L | SQV120N10-3M8 |
| Description | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-262-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 120 A | - | - |
| Rds On Drain Source Resistance | 3.78 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 230 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 250 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Tube | - | - |
| Height | 9.65 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | SQ | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.83 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 118 S | - | - |
| Fall Time | 12 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9 ns | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 46 ns | - | - |
| Typical Turn On Delay Time | 16 ns | - | - |
| Unit Weight | 0.070548 oz | - | - |