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| PartNumber | SSM6N55NU,LF | SSM6N55NU | SSM6N56FE |
| Description | MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS 4.5GD | ||
| Manufacturer | Toshiba | TOSHIBA | Toshiba Semiconductor and Storage |
| Product Category | MOSFET | FETs - Arrays | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | UDFN-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 4 A | - | - |
| Rds On Drain Source Resistance | 64 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 2.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1 W | - | - |
| Configuration | Dual | - | - |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Height | 0.75 mm | - | - |
| Length | 2 mm | - | - |
| Series | SSM6N55 | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Width | 2 mm | - | - |
| Brand | Toshiba | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Package Case | - | - | SOT-563, SOT-666 |
| Operating Temperature | - | - | 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | ES6 |
| FET Type | - | - | 2 N-Channel (Dual) |
| Power Max | - | - | 150mW |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | 55pF @ 10V |
| FET Feature | - | - | Logic Level Gate, 1.5V Drive |
| Current Continuous Drain Id 25°C | - | - | 800mA |
| Rds On Max Id Vgs | - | - | 235 mOhm @ 800mA, 4.5V |
| Vgs th Max Id | - | - | 1V @ 1mA |
| Gate Charge Qg Vgs | - | - | 1nC @ 4.5V |