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| PartNumber | STB5N62K3 | STB5N80K5 | STB5N52K3 |
| Description | MOSFET N-Ch 620V 1.28V Ohm 4.2A SuperMESH3 | MOSFET N-channel 800 V, 1.50 Ohm typ., 4 A MDmesh K5 Power MOSFET in a D2PAK package | IGBT Transistors MOSFET N-Ch 525V 1.2 Ohm 4.4A SuperMESH3 |
| Manufacturer | STMicroelectronics | STMicroelectronics | ST |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 620 V | 800 V | - |
| Id Continuous Drain Current | 4.2 A | 4 A | - |
| Rds On Drain Source Resistance | 1.6 Ohms | 1.5 Ohms | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 26 nC | 5 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 70 W | 60 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Series | STB5N62K3 | STB5N80K5 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Fall Time | 21 ns | 14.8 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 8 ns | 11.7 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 40 ns | 23 ns | - |
| Typical Turn On Delay Time | 12 ns | 12.7 ns | - |
| Unit Weight | 0.139332 oz | 0.077603 oz | - |
| Vgs th Gate Source Threshold Voltage | - | 3 V | - |
| Tradename | - | MDmesh | - |