STD11NM50N vs STD11NM60N vs STD11NM60N-1

 
PartNumberSTD11NM50NSTD11NM60NSTD11NM60N-1
DescriptionMOSFET POWER MOSFET N-CH 500VMOSFET N-CH 600V 10A DPAKMOSFET N-CH 600V 10A I-PAK
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current8.5 A--
Rds On Drain Source Resistance470 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage25 V--
Qg Gate Charge19 nC--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation70 W--
ConfigurationSingle--
TradenameMDmesh--
PackagingReel--
SeriesSTD11NM50N--
Transistor Type1 N-Channel--
TypePower MOSFET--
BrandSTMicroelectronics--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time33 ns--
Typical Turn On Delay Time8 ns--
Unit Weight0.139332 oz--
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