STD2HNK60Z vs STD2HNK60Z,D2HNK60Z,2HNK vs STD2HNK60Z,D2HNK60Z,2HNK60,2N60

 
PartNumberSTD2HNK60ZSTD2HNK60Z,D2HNK60Z,2HNKSTD2HNK60Z,D2HNK60Z,2HNK60,2N60
DescriptionMOSFET N Ch 600V Zener SuprMESH 4.4 A
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current2 A--
Rds On Drain Source Resistance4.8 Ohms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge11 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation45 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameSuperMESH--
PackagingReel--
Height2.4 mm--
Length6.6 mm--
SeriesSTD2HNK60Z--
Transistor Type1 N-Channel Power MOSFET--
Width6.2 mm--
BrandSTMicroelectronics--
Forward Transconductance Min1.5 S--
Fall Time50 ns--
Product TypeMOSFET--
Rise Time30 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time23 ns--
Typical Turn On Delay Time10 ns--
Unit Weight0.139332 oz--
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