 |  | | |
| PartNumber | STD35N3LH5 | STD35NF06 | STD35NF06L |
| Description | IGBT Transistors MOSFET N-Ch 30V 14m 35A 16mOhm STripFET V | Power Field-Effect Transistor, 35A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | |
| Manufacturer | VB | - | - |
| Product Category | FETs - Single | - | - |
| Series | N-channel STripFET | - | - |
| Packaging | Reel | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | TO-252-3 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 35 W | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 3.5 ns | - | - |
| Rise Time | 4 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 35 A | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Rds On Drain Source Resistance | 16 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 20 ns | - | - |
| Typical Turn On Delay Time | 4 ns | - | - |
| Qg Gate Charge | 5.4 nC | - | - |
| Channel Mode | Enhancement | - | - |