STF22NM60N vs STF22N60M6 vs STF22N60DM6

 
PartNumberSTF22NM60NSTF22N60M6STF22N60DM6
DescriptionMOSFET N-channel 600 V 0.190 16A MDmeshMOSFETMOSFET
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
RoHSY--
TechnologySi--
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220FP-3TO-220FP-3
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage650 V600 V600 V
Id Continuous Drain Current16 A15 A15 A
Rds On Drain Source Resistance220 mOhms230 mOhms255 mOhms
Vgs th Gate Source Threshold Voltage3 V3.25 V-
Vgs Gate Source Voltage30 V25 V-
Qg Gate Charge44 nC20 nC18 nC
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation30 W30 W-
ConfigurationSingleSingle-
TradenameMDmesh--
PackagingTube--
SeriesSTF22NM60N--
Transistor Type1 N-Channel1 N-Channel-
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Fall Time38 ns8.7 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time18 ns6.3 ns-
Factory Pack Quantity100010001000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time74 ns32 ns-
Typical Turn On Delay Time11 ns13.6 ns-
Unit Weight0.011640 oz--
Channel Mode-EnhancementEnhancement
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