STGB15M65DF2 vs STGB15H60DF vs STGB15H60DF-CUT TAPE

 
PartNumberSTGB15M65DF2STGB15H60DFSTGB15H60DF-CUT TAPE
DescriptionIGBT Transistors Trench gate field-stop IGBT M series, 650 V 15 A low lossIGBT Transistors Trench gate field-stop IGBT, H series 600 V, 15 A high speed
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseD2PAK-3D2PAK-
Mounting StyleSMD/SMTSMD/SMT-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max650 V600 V-
Collector Emitter Saturation Voltage1.55 V1.6 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C30 A30 A-
Pd Power Dissipation136 W115 W-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
SeriesSTGB15M65DF2STGB15H60DF-
PackagingReelReel-
Continuous Collector Current Ic Max30 A--
BrandSTMicroelectronicsSTMicroelectronics-
Gate Emitter Leakage Current+/- 250 uA250 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity10001000-
SubcategoryIGBTsIGBTs-
Unit Weight-0.070548 oz-
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