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| PartNumber | STGB6NC60HDT4 | STGB6NC60HD-1 | STGB6NC60HD |
| Description | IGBT Transistors PowerMESH TM IGBT | IGBT Transistors N Ch 6A 600V | |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | IGBT Transistors | IGBT Transistors | IGBTs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Package / Case | D2PAK-3 | I2PAK-3 | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V | - |
| Collector Emitter Saturation Voltage | 2.7 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Pd Power Dissipation | 80 W | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | STGB6NC60HDT4 | STGB6NC60HD | PowerMESH |
| Packaging | Reel | Tube | Tube |
| Continuous Collector Current Ic Max | 15 A | 15 A | - |
| Height | 4.6 mm | 9.35 mm | - |
| Length | 10.4 mm | 10.4 mm | - |
| Width | 9.35 mm | 4.6 mm | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Continuous Collector Current | 12 A | - | - |
| Gate Emitter Leakage Current | 100 nA | - | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | IGBTs | IGBTs | - |
| Unit Weight | 0.079014 oz | 0.084199 oz | - |
| Package Case | - | - | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Input Type | - | - | Standard |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | I2PAK |
| Power Max | - | - | 56W |
| Reverse Recovery Time trr | - | - | 21ns |
| Current Collector Ic Max | - | - | 15A |
| Voltage Collector Emitter Breakdown Max | - | - | 600V |
| IGBT Type | - | - | - |
| Current Collector Pulsed Icm | - | - | 21A |
| Vce on Max Vge Ic | - | - | 2.5V @ 15V, 3A |
| Switching Energy | - | - | 20μJ (on), 68μJ (off) |
| Gate Charge | - | - | 13.6nC |
| Td on off 25°C | - | - | 12ns/76ns |
| Test Condition | - | - | 390V, 3A, 10 Ohm, 15V |