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| PartNumber | STGW60H65DFB | STGW60H60DLFB | STGW60H65DF |
| Description | IGBT Transistors 600V 60A trench gate field-stop IGBT | IGBT Transistors 600V 60A trench gate field-stop IGBT | IGBT Transistors 60 A 650V Field Stop Trench Gate IGBT |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Package / Case | TO-247-3 | TO-247-3 | TO-247 |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 650 V | 600 V | 650 V |
| Collector Emitter Saturation Voltage | 1.6 V | 1.6 V | 2.1 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Continuous Collector Current at 25 C | 80 A | 80 A | 120 A |
| Pd Power Dissipation | 375 W | 375 W | 360 W |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Series | STGW60H65DFB | STGW60H60DLFB | STGW60H65DF |
| Packaging | Tube | Tube | Tube |
| Continuous Collector Current Ic Max | 60 A | 60 A | - |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Gate Emitter Leakage Current | 250 nA | 250 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 600 | 600 | 600 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 1.340411 oz | 1.340411 oz | 0.229281 oz |