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| PartNumber | STGWT20H60DF | STGWT20H65FB | STGWT15H60F |
| Description | IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop | IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 20 A high speed | IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 15 A high speed |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Package / Case | TO-3P-3 | TO-3P | TO-3P |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 600 V | 650 V | 600 V |
| Collector Emitter Saturation Voltage | 2 V | 1.55 V | 1.6 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Continuous Collector Current at 25 C | 40 A | 40 A | 30 A |
| Pd Power Dissipation | 167 W | 168 W | 115 W |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Series | STGWT20H60DF | STGWT20H65FB | STGWT15H60F |
| Packaging | Tube | Tube | Tube |
| Continuous Collector Current Ic Max | 20 A | 20 A | - |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Gate Emitter Leakage Current | 250 nA | 250 nA | 250 nA |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 300 | 300 | 300 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 0.245577 oz | 0.238311 oz | 0.194007 oz |