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| PartNumber | STH310N10F7-2 | STH310N10F7-2-CUT TAPE | STH310N10F7 |
| Description | MOSFET N-CH 100V 2.1mOhm 180A STripFET VI | ||
| Manufacturer | STMicroelectronics | - | STMicroelectronics |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | H2PAK-2 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 180 A | - | - |
| Rds On Drain Source Resistance | 2.5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.8 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 180 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 315 W | - | - |
| Configuration | Single | - | Single |
| Tradename | STripFET | - | STripFET |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Series | STH310N10F7-2 | - | DeepGATE, STripFET VII |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | STMicroelectronics | - | - |
| Fall Time | 40 ns | - | 40 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 108 ns | - | 108 ns |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 148 ns | - | 148 ns |
| Typical Turn On Delay Time | 62 ns | - | 62 ns |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Package Case | - | - | TO-263-3, D2Pak (2 Leads + Tab) Variant |
| Operating Temperature | - | - | -55°C ~ 175°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | H2PAK |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 315W |
| Drain to Source Voltage Vdss | - | - | 100V |
| Input Capacitance Ciss Vds | - | - | 12800pF @ 25V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 180A (Tc) |
| Rds On Max Id Vgs | - | - | 2.5 mOhm @ 60A, 10V |
| Vgs th Max Id | - | - | 3.8V @ 250μA |
| Gate Charge Qg Vgs | - | - | 180nC @ 10V |
| Pd Power Dissipation | - | - | 315 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 180 A |
| Vds Drain Source Breakdown Voltage | - | - | 100 V |
| Vgs th Gate Source Threshold Voltage | - | - | 3.8 V |
| Rds On Drain Source Resistance | - | - | 2.5 mOhms |
| Qg Gate Charge | - | - | 180 nC |