STI14NM50N vs STI14NM65N vs STI14NM65N-H

 
PartNumberSTI14NM50NSTI14NM65NSTI14NM65N-H
DescriptionMOSFET N-Ch 500 V 0.28 Ohm 12 A MDmesh(TM) IIMOSFET N-Ch, 650V-0.33ohms 12A
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-262-3TO-262-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage500 V650 V-
Id Continuous Drain Current12 A12 A-
Rds On Drain Source Resistance280 mOhms380 mOhms-
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage25 V25 V-
Qg Gate Charge27 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation90 W125 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
SeriesSTI14NM50NSTB14NM65N-
Transistor Type1 N-Channel1 N-Channel-
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time22 ns20 ns-
Product TypeMOSFETMOSFET-
Rise Time16 ns13 ns-
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time42 ns55 ns-
Typical Turn On Delay Time10.2 ns11 ns-
Unit Weight0.050717 oz0.050717 oz-
Height-8.95 mm-
Length-10 mm-
Width-4.4 mm-
Top