STL8N65M2 vs STL8N6F7 vs STL8N65M5

 
PartNumberSTL8N65M2STL8N6F7STL8N65M5
DescriptionMOSFET POWER MOSFETMOSFET N-channel 60 V, 0.019 Ohm typ., 8 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 packageMOSFET N-CH 650V 7A POWERFLAT
ManufacturerSTMicroelectronicsSTMicroelectronicsST
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerFLAT-8PowerFLAT-3.3x3.3-8-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage650 V60 V-
Vgs Gate Source Voltage25 V20 V-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
ConfigurationSingleSingleSingle
PackagingReel-Reel
ProductPower MOSFET--
SeriesSTL8N65M2STL8N6F7MDmesh M5
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronics-
Product TypeMOSFETMOSFET-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Id Continuous Drain Current-36 A-
Rds On Drain Source Resistance-19 mOhms-
Vgs th Gate Source Threshold Voltage-2 V-
Qg Gate Charge-8 nC-
Pd Power Dissipation-60 W-
Channel Mode-Enhancement-
Tradename-STripFET-
Fall Time-3.95 ns-
Rise Time-3.25 ns-
Typical Turn Off Delay Time-12.1 ns-
Typical Turn On Delay Time-7.85 ns-
Package Case--PowerFLAT-14
Pd Power Dissipation--70 W
Vgs Gate Source Voltage--25 V
Id Continuous Drain Current--7 A
Vds Drain Source Breakdown Voltage--650 V
Rds On Drain Source Resistance--600 mOhms
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