STP11NM60 vs STP11NM50N vs STP11NM60 P11NM60

 
PartNumberSTP11NM60STP11NM50NSTP11NM60 P11NM60
DescriptionMOSFET N-Ch 600 Volt 11 AmpMOSFET POWER MOSFET N-CH 500V 7.5A
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSTY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V500 V-
Id Continuous Drain Current11 A8.5 A-
Rds On Drain Source Resistance450 mOhms470 mOhms-
Vgs Gate Source Voltage30 V25 V-
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation160 W70 W-
ConfigurationSingleSingle-
Channel ModeEnhancement--
TradenameMDmesh--
PackagingTubeTube-
Height9.15 mm--
Length10.4 mm--
SeriesSTP11NM60STP11NM50N-
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFETPower MOSFET-
Width4.6 mm--
BrandSTMicroelectronicsSTMicroelectronics-
Forward Transconductance Min5.2 S--
Fall Time11 ns10 ns-
Product TypeMOSFETMOSFET-
Rise Time20 ns10 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time6 ns33 ns-
Typical Turn On Delay Time20 ns8 ns-
Unit Weight0.079014 oz0.011640 oz-
Vgs th Gate Source Threshold Voltage-3 V-
Qg Gate Charge-19 nC-
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