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| PartNumber | STP17N80K5 | STP17N62K3 | STP17NB20FP |
| Description | MOSFET N-channel 800 V, 0.29 Ohm typ., 14 A MDmesh K5 Power MOSFET in a TO-220 package | MOSFET N-Ch 620V .34 Ohm 15A SuperMESH3 | |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Tradename | MDmesh | - | - |
| Packaging | Tube | Tube | - |
| Series | STP17N80K5 | STP17N62K3 | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 1000 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.063493 oz | 0.011640 oz | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 620 V | - |
| Id Continuous Drain Current | - | 15 A | - |
| Rds On Drain Source Resistance | - | 380 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 4.5 V | - |
| Vgs Gate Source Voltage | - | 30 V | - |
| Qg Gate Charge | - | 94 nC | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 190 W | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Type | - | SuperMESH3 Power MOSFET | - |
| Forward Transconductance Min | - | 1.6 S | - |
| Fall Time | - | 63 ns | - |
| Rise Time | - | 26 ns | - |
| Typical Turn Off Delay Time | - | 91 ns | - |
| Typical Turn On Delay Time | - | 25 ns | - |