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| PartNumber | STP18N60DM2 | STP18N60M2 | STP18N60M2 18N60M2 |
| Description | MOSFET N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 package | MOSFET N-CH 600V 0.255Ohm 13A MDmesh M2 | |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 12 A | 13 A | - |
| Rds On Drain Source Resistance | 260 mOhms | 255 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 3 V | - |
| Vgs Gate Source Voltage | 25 V | 25 V | - |
| Qg Gate Charge | 20 nC | 21.5 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 90 W | 110 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Series | STP18N60DM2 | STP18N60M2 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Forward Transconductance Min | - | - | - |
| Fall Time | 32.5 ns | 10.6 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 8 ns | 9 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 9.5 ns | 47 ns | - |
| Typical Turn On Delay Time | 13.5 ns | 12 ns | - |
| Unit Weight | 0.011640 oz | 0.011640 oz | - |
| Packaging | - | Tube | - |