STP25NM50N vs STP25NM50 vs STP25NM60

 
PartNumberSTP25NM50NSTP25NM50STP25NM60
DescriptionMOSFET N-CHANNEL MOSFET Power MDmesh
ManufacturerSTMicroelectronicsST-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiMOSFET (Metal Oxide)-
Mounting StyleThrough Hole--
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current21.5 A--
Rds On Drain Source Resistance140 mOhms--
Vgs Gate Source Voltage25 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation160 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTubeTube-
Height9.15 mm--
Length10.4 mm--
SeriesSTB25NM50NMDmesh-
Transistor Type1 N-Channel--
Width4.6 mm--
BrandSTMicroelectronics--
Forward Transconductance Min19 S--
Fall Time22 ns--
Product TypeMOSFET--
Rise Time23 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time75 ns--
Typical Turn On Delay Time23 ns--
Unit Weight0.011640 oz--
Part Status-Obsolete-
FET Type-N-Channel-
Drain to Source Voltage (Vdss)-500V-
Current Continuous Drain (Id) @ 25°C-22A (Tc)-
Drive Voltage (Max Rds On, Min Rds On)-10V-
Vgs(th) (Max) @ Id-4V @ 250A-
Gate Charge (Qg) (Max) @ Vgs-84nC @ 10V-
Vgs (Max)-±25V-
Input Capacitance (Ciss) (Max) @ Vds-2565pF @ 25V-
FET Feature---
Power Dissipation (Max)-160W (Tc)-
Rds On (Max) @ Id, Vgs-140 mOhm @ 11A, 10V-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Through Hole-
Supplier Device Package-TO-220AB-
Top