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| PartNumber | STQ1HN60K3-AP | STQ1HNC60 | STQ1HNK60 |
| Description | MOSFET N-Ch 600V 6.4 Ohm 1.2A SuperMESH3 FET | ||
| Manufacturer | STMicroelectronics | - | ST |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-92-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 400 mA | - | - |
| Rds On Drain Source Resistance | 6.7 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.75 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 9.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 3 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | SuperMESH | - | - |
| Packaging | Ammo Pack | - | - |
| Series | STQ1HN60K3-AP | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | STMicroelectronics | - | - |
| Fall Time | 31 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 23 ns | - | - |
| Typical Turn On Delay Time | 7 ns | - | - |
| Unit Weight | 0.007760 oz | - | - |