STW55NM60ND vs STW55NM60N vs STW55NM60N,STW55NM60ND,5

 
PartNumberSTW55NM60NDSTW55NM60NSTW55NM60N,STW55NM60ND,5
DescriptionMOSFET N-channel 600 V FDMeshMOSFET N-Channel 600V Power MDmesh
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current51 A51 A-
Rds On Drain Source Resistance60 mOhms60 mOhms-
Vgs Gate Source Voltage25 V25 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation350 W350 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Height20.15 mm20.15 mm-
Length15.75 mm15.75 mm-
SeriesSTW55NM60NDSTW55NM60N-
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm5.15 mm-
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time96 ns70 ns-
Product TypeMOSFETMOSFET-
Rise Time68 ns30 ns-
Factory Pack Quantity60030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time188 ns225 ns-
Typical Turn On Delay Time33 ns40 ns-
Unit Weight1.340411 oz1.340411 oz-
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