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| PartNumber | STW69N65M5 | STW69N65M5-4 | STW69N65M5-4 69N65M5 |
| Description | MOSFET N-Ch 650V 0.037 Ohm 58A MDMesh M5 MOS | MOSFET N-CH 650V 0.037Ohm 58A | |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | MOSFET | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | TO-247-4 | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | 710 V | - |
| Id Continuous Drain Current | 58 A | 58 A | - |
| Rds On Drain Source Resistance | 45 mOhms | 37 mOhms | - |
| Pd Power Dissipation | 330 W | 330 W | - |
| Tradename | MDmesh | MDmesh | - |
| Packaging | Tube | Tube | - |
| Series | STW69N65M5 | STW69N65M5-4 | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 600 | 600 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 1.340411 oz | - | - |
| RoHS | - | Y | - |
| Number of Channels | - | 1 Channel | - |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Vgs Gate Source Voltage | - | 25 V | - |
| Qg Gate Charge | - | 143 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Fall Time | - | 11.5 ns | - |
| Rise Time | - | 10 ns | - |