STY100NM60N vs STY100NS20FD vs STY100NM60N 100NM60N

 
PartNumberSTY100NM60NSTY100NS20FDSTY100NM60N 100NM60N
DescriptionMOSFET N-Ch 600V 0.025 Ohm 98A MDmesh II FETMOSFET N-Ch 200 Volt 100 A
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseMax247-3Max247-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V200 V-
Id Continuous Drain Current74 A100 A-
Rds On Drain Source Resistance29 mOhms24 mOhms-
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage25 V20 V-
Pd Power Dissipation625 W450 W-
ConfigurationSingleSingle-
TradenameMDmesh--
PackagingTubeTube-
SeriesSTY100NM60NSTY100NS20FD-
Transistor Type1 N-Channel1 N-Channel-
BrandSTMicroelectronicsSTMicroelectronics-
Product TypeMOSFETMOSFET-
Factory Pack Quantity600600-
SubcategoryMOSFETsMOSFETs-
Unit Weight1.340411 oz1.340411 oz-
Minimum Operating Temperature-- 65 C-
Maximum Operating Temperature-+ 150 C-
Channel Mode-Enhancement-
Height-20.3 mm-
Length-15.9 mm-
Type-MOSFET-
Width-5.3 mm-
Fall Time-140 ns-
Rise Time-140 ns-
Typical Turn On Delay Time-42 ns-
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