 |  | | |
| PartNumber | TBC847B,LM | TBC847-B | TBC847B(-4) |
| Description | Bipolar Transistors - BJT BJT NPN 0.15A 50V | ||
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 170 mV | - | - |
| Maximum DC Collector Current | 150 mA | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | TBC8X7 | - | - |
| DC Current Gain hFE Max | 450 at 2 mA, 5 V | - | - |
| Packaging | Reel | - | - |
| Brand | Toshiba | - | - |
| Continuous Collector Current | 150 mA | - | - |
| DC Collector/Base Gain hfe Min | 200 | - | - |
| Pd Power Dissipation | 320 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000282 oz | - | - |