TC6215TG-G vs TC62104P vs TC6216M

 
PartNumberTC6215TG-GTC62104PTC6216M
DescriptionMOSFET N & P Channel Enhanc ement Dual MOSFET
ManufacturerMicrochip--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOIC-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage150 V--
Rds On Drain Source Resistance4 Ohms, 7 Ohms--
Vgs th Gate Source Threshold Voltage1 V, 2 V--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Height1.65 mm--
Length4.9 mm--
ProductMOSFET Small Signal--
SeriesTC621--
Transistor Type1 N-Channel, 1 P-Channel--
TypeEnhancement Mode Dual Channel N & P--
Width3.8 mm--
BrandMicrochip Technology--
Fall Time11.3 ns, 11.1 ns--
Product TypeMOSFET--
Rise Time2.3 ns, 2.3 ns--
Factory Pack Quantity3300--
SubcategoryMOSFETs--
Typical Turn Off Delay Time17.2 ns, 16.2 ns--
Typical Turn On Delay Time2.5 ns, 2.4 ns--
Unit Weight0.002998 oz--
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