TK35E08N1,S1X vs TK35E08N1,S1X(S vs TK35E08N1

 
PartNumberTK35E08N1,S1XTK35E08N1,S1X(STK35E08N1
DescriptionMOSFET 80V N-Ch PWR FET 55A 72W 25nCMOSFET N-CHANNEL 80V 55A TO220, PKMOSFET N-CH 80V 35A U-MOS TO220, TU
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current55 A--
Rds On Drain Source Resistance12.2 mOhms--
Vgs Gate Source Voltage10 V--
Qg Gate Charge25 nC--
Pd Power Dissipation72 W--
ConfigurationSingle--
Height15.1 mm--
Length10.16 mm--
SeriesTK35E08N1--
Transistor Type1 N-Channel--
Width4.45 mm--
BrandToshiba--
Product TypeMOSFET--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Unit Weight0.211644 oz--
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