TK40E10N1,S1X vs TK40E10N1 vs TK40E10N1,S1X(S

 
PartNumberTK40E10N1,S1XTK40E10N1TK40E10N1,S1X(S
DescriptionMOSFET 40V N0Ch PWR FET 90A 126W 3000pF
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current90 A--
Rds On Drain Source Resistance8.2 mOhms--
Vgs Gate Source Voltage10 V--
Pd Power Dissipation126 W--
ConfigurationSingle--
Height15.1 mm--
Length10.16 mm--
SeriesTK40E10N1--
Transistor Type1 N-Channel--
Width4.45 mm--
BrandToshiba--
Product TypeMOSFET--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Unit Weight0.211644 oz--
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