TK62N60W,S1VF vs TK62N60W vs TK62N60W S1VF(S

 
PartNumberTK62N60W,S1VFTK62N60WTK62N60W S1VF(S
DescriptionMOSFET DTMOSIV 600V 40mOhm 61.8A 400W 6500pF
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-247-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current61.8 A--
Rds On Drain Source Resistance33 mOhms--
Vgs th Gate Source Threshold Voltage3.7 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge180 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation400 W--
ConfigurationSingle--
TradenameDTMOSIV--
Height20.95 mm--
Length15.94 mm--
SeriesTK62N60W--
Transistor Type1 N-Channel--
Width5.02 mm--
BrandToshiba--
Fall Time15 ns--
Product TypeMOSFET--
Rise Time58 ns--
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time310 ns--
Typical Turn On Delay Time115 ns--
Unit Weight1.340411 oz--
Top