TN0610N3-G-P003 vs TN0610N3-G vs TN0610N3-G P002

 
PartNumberTN0610N3-G-P003TN0610N3-GTN0610N3-G P002
DescriptionMOSFET N-CH Enhancmnt Mode MOSFETMOSFET 100V 1.5OhmRF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
ManufacturerMicrochipMicrochip-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3TO-92-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current500 mA500 mA-
Rds On Drain Source Resistance15 Ohms1.5 Ohms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1 W1 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelBulk-
Height5.33 mm--
Length5.21 mm--
ProductMOSFET Small Signal--
Transistor Type1 N-Channel1 N-Channel-
Width4.19 mm--
BrandMicrochip TechnologyMicrochip Technology-
Fall Time16 ns--
Product TypeMOSFETMOSFET-
Rise Time14 ns--
Factory Pack Quantity20001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time16 ns16 ns-
Typical Turn On Delay Time6 ns6 ns-
Unit Weight0.016000 oz0.016000 oz-
Type-FET-
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