TP0606N3-G vs TP0606N3-G-P003 vs TP0606N3-G P005

 
PartNumberTP0606N3-GTP0606N3-G-P003TP0606N3-G P005
DescriptionMOSFET 60V 3.5OhmMOSFET P-CH Enhancmnt Mode MOSFETRF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFET
ManufacturerMicrochipMicrochipMicrochip Technology
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-92-3TO-92-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelP-ChannelP-Channel
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current320 mA320 mA-
Rds On Drain Source Resistance3.5 Ohms7 Ohms-
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1 W1 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancementEnhancement
PackagingBulkReelReel
Height5.33 mm5.33 mm-
Length5.21 mm5.21 mm-
Transistor Type1 P-Channel1 P-Channel1 P-Channel
TypeFET--
Width4.19 mm4.19 mm-
BrandMicrochip TechnologyMicrochip Technology-
Forward Transconductance Min300 mS--
Fall Time15 ns15 ns-
Product TypeMOSFETMOSFET-
Rise Time15 ns15 ns-
Factory Pack Quantity10002000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time20 ns20 ns-
Typical Turn On Delay Time10 ns10 ns-
Unit Weight0.016000 oz0.016000 oz0.016000 oz
Product-MOSFET Small Signal-
Package Case--TO-92-3
Id Continuous Drain Current--- 320 mA
Vds Drain Source Breakdown Voltage--- 60 V
Rds On Drain Source Resistance--7 Ohms
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