TPH1R403NL,L1Q vs TPH1R403NL vs TPH1R403NL L1Q(M

 
PartNumberTPH1R403NL,L1QTPH1R403NLTPH1R403NL L1Q(M
DescriptionMOSFET X35PBF Power MOSFET Trans VGS4.5VVDS30V
ManufacturerToshibaToshiba Semiconductor and Storage-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOP-Advance-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current60 A--
Rds On Drain Source Resistance1.4 mOhms--
Vgs th Gate Source Threshold Voltage2.3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge46 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation64 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelDigi-ReelR Alternate Packaging-
Height0.95 mm--
Length5 mm--
SeriesTPH1R403NL--
Transistor Type1 N-Channel--
Width5 mm--
BrandToshiba--
Product TypeMOSFET--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Unit Weight0.030018 oz--
Package Case-8-PowerVDFN-
Operating Temperature-150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-8-SOP Advance-
FET Type-MOSFET N-Channel, Metal Oxide-
Power Max-64W-
Drain to Source Voltage Vdss-30V-
Input Capacitance Ciss Vds-4400pF @ 15V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-60A (Ta)-
Rds On Max Id Vgs-1.4 mOhm @ 30A, 10V-
Vgs th Max Id-2.3V @ 500μA-
Gate Charge Qg Vgs-46nC @ 10V-
Top