TPH2R306NH,L1Q vs TPH2R306NH vs TPH2R306NH,L1Q(M

 
PartNumberTPH2R306NH,L1QTPH2R306NHTPH2R306NH,L1Q(M
DescriptionMOSFET U-MOSVIII-H 60V 130A 72nC MOSFETTrans MOSFET N-CH 60V 130A 8-Pin SOP (Alt: TPH2R306NH,L1Q(M)
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOP-Advance-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current130 A--
Rds On Drain Source Resistance1.9 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge72 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation78 W--
ConfigurationSingle--
TradenameUMOSVIII--
PackagingReel--
Height0.95 mm--
Length5 mm--
SeriesTPH2R306NH--
Transistor Type1 N-Channel--
Width5 mm--
BrandToshiba--
Fall Time16 ns--
Product TypeMOSFET--
Rise Time9.9 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time50 ns--
Typical Turn On Delay Time29 ns--
Unit Weight0.030018 oz--
Top