TPH4R10ANL,L1Q vs TPH4R10ANL vs TPH4R10ANL,L1Q(M

 
PartNumberTPH4R10ANL,L1QTPH4R10ANLTPH4R10ANL,L1Q(M
DescriptionMOSFET U-MOSVIII-H 100V 92A 75nC MOSFET
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOP-Advance-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current92 A--
Rds On Drain Source Resistance3.3 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge75 nC--
Minimum Operating Temperature---
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation67 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
SeriesTPH4R10ANL--
Transistor Type1 N-Channel--
BrandToshiba--
Fall Time15 ns--
Product TypeMOSFET--
Rise Time8 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time71 ns--
Typical Turn On Delay Time20 ns--
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