TPH8R80ANH,L1Q vs TPH8R80ANH vs TPH8R80ANH,L1Q(M

 
PartNumberTPH8R80ANH,L1QTPH8R80ANHTPH8R80ANH,L1Q(M
DescriptionMOSFET N-Ch 120V 59A 61W UMOSVIII 2180pF 33nCMOSFET N-CH 100V 32A 19NS U-MOS SOP8 ADV, RLTrans MOSFET N-CH 100V 59A 8-Pin SOP (Alt: TPH8R80ANH,L1Q(M)
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOP-Advance-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current59 A--
Rds On Drain Source Resistance7.4 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge33 nC--
Pd Power Dissipation61 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.95 mm--
Length5 mm--
SeriesTPH8R80ANH--
Transistor Type1 N-Channel--
Width5 mm--
BrandToshiba--
Fall Time12 ns--
Product TypeMOSFET--
Rise Time7 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time33 ns--
Typical Turn On Delay Time19 ns--
Unit Weight0.030018 oz--
Top