TPN4R303NL,L1Q vs TPN4R303NLL1QCT-ND vs TPN4R303NL

 
PartNumberTPN4R303NL,L1QTPN4R303NLL1QCT-NDTPN4R303NL
DescriptionMOSFET U-MOSVIII-H 30V 63A 6.8nC MOSFETMOSFET POWER N-CH 63A TSON EP, RL of 5000
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSON-Advance-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current63 A--
Rds On Drain Source Resistance6.3 mOhms--
Vgs th Gate Source Threshold Voltage2.3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge14.8 nC--
Pd Power Dissipation34 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.85 mm--
Length3.1 mm--
SeriesTPN4R303NL--
Transistor Type1 N-Channel--
Width3.1 mm--
BrandToshiba--
Fall Time3.5 ns--
Product TypeMOSFET--
Rise Time4.5 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time19 ns--
Typical Turn On Delay Time10.5 ns--
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