TPN6R303NC,LQ vs TPN6R303NC vs TPN6R303NC LQ(S

 
PartNumberTPN6R303NC,LQTPN6R303NCTPN6R303NC LQ(S
DescriptionMOSFET N-Ch 30V 1370pF 24nC 6.3mOhm 43A 19W
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSON-Advance-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current43 A--
Rds On Drain Source Resistance5.2 mOhms--
Vgs th Gate Source Threshold Voltage2.3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge24 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation19 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.85 mm--
Length3.1 mm--
SeriesTPN6R303NC--
Transistor Type1 N-Channel--
Width3.1 mm--
BrandToshiba--
Fall Time14 ns--
Product TypeMOSFET--
Rise Time6 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time55 ns--
Typical Turn On Delay Time14 ns--
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