TSM100N06CZ C0G vs TSM100N06CZ C0 vs TSM100N06CZ

 
PartNumberTSM100N06CZ C0GTSM100N06CZ C0TSM100N06CZ
DescriptionMOSFET 55V 100Amp N channel MosfetMOSFET 55V 100A N Channel Mosfet
ManufacturerTaiwan SemiconductorTaiwan Semiconductor-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current14 A--
Rds On Drain Source Resistance5.7 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge81 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation167 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelTube-
Transistor Type1 N-Channel1 N-Channel-
BrandTaiwan Semiconductor--
Fall Time43 ns--
Product TypeMOSFET--
Rise Time19 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time85 ns--
Typical Turn On Delay Time25 ns--
Unit Weight0.063493 oz0.211644 oz-
Package Case-TO-220-3-
Id Continuous Drain Current-100 A-
Vds Drain Source Breakdown Voltage-60 V-
Rds On Drain Source Resistance-6.7 mOhms-
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