 |  |  | |
| PartNumber | TSM900N06CH X0G | TSM900N06CP ROG | TSM900N06CH C5G |
| Description | MOSFET 60V 11A N Channel Power Mosfet | MOSFET 60V 11A N Channel Power Mosfet | |
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | SMD/SMT | - |
| Package / Case | TO-251S-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 11 A | 11 A | - |
| Rds On Drain Source Resistance | 76 mOhms | 76 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
| Vgs Gate Source Voltage | 10 V | 10 V | - |
| Qg Gate Charge | 9.3 nC | 9.3 nC | - |
| Minimum Operating Temperature | - | - | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 25 W | 25 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Reel | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Taiwan Semiconductor | Taiwan Semiconductor | - |
| Fall Time | 5.3 ns | 5.3 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 9.5 ns | 9.5 ns | - |
| Factory Pack Quantity | 3750 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 18.4 ns | 18.4 ns | - |
| Typical Turn On Delay Time | 2.9 ns | 2.9 ns | - |
| Unit Weight | 0.011993 oz | 0.011993 oz | - |