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| PartNumber | TT8J2TR | TT8J2 | TT8J21 |
| Description | MOSFET SW MOSFET MIDDLE PWR P CH -30V-2.5A | ||
| Manufacturer | ROHM Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
| Product Category | MOSFET | FETs - Arrays | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSST-8 | - | - |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 2.5 A | - | - |
| Rds On Drain Source Resistance | 60 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 4.8 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 1.25 W | - | - |
| Configuration | Dual | Dual Dual Drain | Dual Dual Drain |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Digi-ReelR Alternate Packaging | Digi-ReelR Alternate Packaging |
| Transistor Type | 2 P-Channel | 2 P-Channel | 2 P-Channel |
| Brand | ROHM Semiconductor | - | - |
| Forward Transconductance Min | 1.8 S | - | - |
| Fall Time | 14 ns | 30 ns | 30 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 20 ns | 30 ns | 30 ns |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 35 ns | 120 ns | 120 ns |
| Typical Turn On Delay Time | 7 ns | 9 ns | 9 ns |
| Part # Aliases | TT8J2 | - | - |
| Series | - | TT8J21 | TT8J21 |
| Package Case | - | 8-SMD, Flat Lead | 8-SMD, Flat Lead |
| Operating Temperature | - | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | - | Surface Mount | Surface Mount |
| Supplier Device Package | - | 8-TSST | 8-TSST |
| FET Type | - | 2 P-Channel (Dual) | 2 P-Channel (Dual) |
| Power Max | - | 650mW | 650mW |
| Drain to Source Voltage Vdss | - | 20V | 20V |
| Input Capacitance Ciss Vds | - | 1270pF @ 10V | 1270pF @ 10V |
| FET Feature | - | Logic Level Gate | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | 2.5A | 2.5A |
| Rds On Max Id Vgs | - | 68 mOhm @ 2.5A, 4.5V | 68 mOhm @ 2.5A, 4.5V |
| Vgs th Max Id | - | 1V @ 1mA | 1V @ 1mA |
| Gate Charge Qg Vgs | - | 12nC @ 4.5V | 12nC @ 4.5V |
| Pd Power Dissipation | - | 1.25 W | 1.25 W |
| Vgs Gate Source Voltage | - | 10 V | 10 V |
| Id Continuous Drain Current | - | 2.5 A | 2.5 A |
| Vds Drain Source Breakdown Voltage | - | - 20 V | - 20 V |
| Rds On Drain Source Resistance | - | 68 mOhms | 68 mOhms |