VP0808L-G P003 vs VP0808L-G vs VP0808L-G P002

 
PartNumberVP0808L-G P003VP0808L-GVP0808L-G P002
DescriptionMOSFET N-CH Enhancmnt Mode MOSFETMOSFET 80V 5OhmRF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
ManufacturerMicrochipMicrochip-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3TO-92-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage80 V80 V-
Id Continuous Drain Current280 mA280 mA-
Rds On Drain Source Resistance5 Ohms5 Ohms-
Vgs Gate Source Voltage30 V10 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1 W1 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelBulk-
Height5.33 mm5.33 mm-
Length5.21 mm5.21 mm-
ProductMOSFET Small Signal--
Transistor Type1 P-Channel1 P-Channel-
Width4.19 mm4.19 mm-
BrandMicrochip TechnologyMicrochip Technology-
Fall Time30 ns30 ns-
Product TypeMOSFETMOSFET-
Rise Time40 ns40 ns-
Factory Pack Quantity20001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time30 ns30 ns-
Typical Turn On Delay Time15 ns15 ns-
Unit Weight0.016000 oz0.016000 oz-
Vgs th Gate Source Threshold Voltage-1 V-
Type-FET-
Forward Transconductance Min-200 mS-
Top