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| PartNumber | ZVP0545GTA | ZVP0545GTC | ZVP0545G |
| Description | MOSFET P-Chnl 450V | MOSFET P-Chnl 450V | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-223-3 | SOT-223-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 450 V | 450 V | - |
| Id Continuous Drain Current | 75 mA | 75 mA | - |
| Rds On Drain Source Resistance | 150 Ohms | 150 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 2 W | 2 W | - |
| Configuration | Single | Single | Single Dual Drain |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Cut Tape (CT) Alternate Packaging |
| Height | 1.65 mm | 1.65 mm | - |
| Length | 6.7 mm | 6.7 mm | - |
| Series | ZVP0545 | - | ZVP0545 |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Type | FET | FET | - |
| Width | 3.7 mm | 3.7 mm | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Forward Transconductance Min | 40 mS | - | - |
| Fall Time | 20 ns | 20 ns | 20 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 15 ns | 15 ns | 15 ns |
| Factory Pack Quantity | 1000 | 4000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 15 ns | 15 ns | 15 ns |
| Typical Turn On Delay Time | 10 ns | 10 ns | 10 ns |
| Unit Weight | 0.003951 oz | 0.003951 oz | 0.000282 oz |
| Package Case | - | - | TO-261-4, TO-261AA |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | SOT-223 |
| FET Type | - | - | MOSFET P-Channel, Metal Oxide |
| Power Max | - | - | 2W |
| Drain to Source Voltage Vdss | - | - | 450V |
| Input Capacitance Ciss Vds | - | - | 120pF @ 25V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 75mA (Ta) |
| Rds On Max Id Vgs | - | - | 150 Ohm @ 50mA, 10V |
| Vgs th Max Id | - | - | 4.5V @ 1mA |
| Gate Charge Qg Vgs | - | - | - |
| Pd Power Dissipation | - | - | 2 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | - 75 mA |
| Vds Drain Source Breakdown Voltage | - | - | - 450 V |
| Rds On Drain Source Resistance | - | - | 150 Ohms |