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23LCV512-E

23LCV512-E/ST vs 23LCV512-E/P vs 23LCV512-E/SN

 
PartNumber23LCV512-E/ST23LCV512-E/P23LCV512-E/SN
DescriptionSRAM 512K 2.5V SPI SERIAL SRAM VbatSRAM 512K 2.5V SPI SERIAL SRAM VbatSRAM 512K 2.5V SPI SERIAL SRAM Vbat
ManufacturerMicrochipMicrochipMicrochip Technology
Product CategorySRAMSRAMMemory
RoHSYY-
Memory Size512 kbit512 kbit512K (64K x 8)
Organization64 k x 864 k x 864 k x 8
Access Time---
Maximum Clock Frequency20 MHz20 MHz20 MHz
Interface TypeSerial, 4-Wire, SDI, SPISerial, 4-Wire, SDI, SPISerial 4-Wire SDI SPI
Supply Voltage Max5.5 V5.5 V-
Supply Voltage Min2.5 V2.5 V-
Supply Current Max10 mA10 mA-
Minimum Operating Temperature- 40 C- 40 C- 40 C
Maximum Operating Temperature+ 125 C+ 125 C+ 125 C
Mounting StyleSMD/SMTThrough HoleSMD/SMT
Package / CaseTSSOP-8PDIP-8-
PackagingBulkBulkTube Alternate Packaging
Memory TypeSDRSDRNVSRAM (Non-Volatile SRAM)
Series23LCV51223LCV512-
TypeSynchronousSynchronousSynchronous
BrandMicrochip TechnologyMicrochip Technology-
Product TypeSRAMSRAM-
Factory Pack Quantity10060-
SubcategoryMemory & Data StorageMemory & Data Storage-
Unit Weight0.005573 oz0.032805 oz0.019048 oz
Package Case--SOIC-8
Operating Temperature---40°C ~ 125°C (TA)
Interface--SPI Serial
Voltage Supply--2.5 V ~ 5.5 V
Supplier Device Package--8-SOIC
Speed--20MHz
Format Memory--RAM
Supply Current Max--10 mA
Supply Voltage Max--5.5 V
Supply Voltage Min--2.5 V
제조사 부분 # 설명 RFQ
Microchip Technology
Microchip Technology 		23LCV512-E/ST SRAM 512K 2.5V SPI SERIAL SRAM Vbat
23LCV512-E/P SRAM 512K 2.5V SPI SERIAL SRAM Vbat
23LCV512-E/SN SRAM 512K 2.5V SPI SERIAL SRAM Vbat
23LCV512-E/P SRAM 512K 2.5V SPI SERIAL SRAM Vbat
23LCV512-E/ST SRAM 512K 2.5V SPI SERIAL SRAM Vbat
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