2N30 stock, 2N30, 2N3057A/TR


PartNumber	2N3057A	2N3057A/TR	2N3057AJANTX
Description	Bipolar Transistors - BJT Small-Signal BJT	Bipolar Transistors - BJT
Manufacturer	Microchip	Microchip	-
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	-
RoHS	N	N	-
Technology	Si	Si	-
Mounting Style	Through Hole	Through Hole	-
Package / Case	TO-46-3	TO-46-3	-
Transistor Polarity	NPN	NPN	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	80 V	80 V	-
Collector Base Voltage VCBO	140 V	140 V	-
Emitter Base Voltage VEBO	7 V	7 V	-
Collector Emitter Saturation Voltage	200 mV	0.5 V	-
Maximum DC Collector Current	1 A	1 A	-
Minimum Operating Temperature	- 65 C	- 65 C	-
Maximum Operating Temperature	+ 200 C	+ 200 C	-
Packaging	Bulk	Reel	-
Brand	Microchip / Microsemi	Microchip / Microsemi	-
Pd Power Dissipation	500 mW	1.8 W	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	1	100	-
Subcategory	Transistors	Transistors	-
DC Current Gain hFE Max	-	300 at 500 mA, 10 V	-
DC Collector/Base Gain hfe Min	-	15 at 1 A, 10 V	-

Search Part Number : "2N30", Match & Start with "2N30" - Total : 110

2N30