| PartNumber | 2N3019 | 2N3019S | 2N3019/TR |
| Description | Bipolar Transistors - BJT NPN Gen Pur SS | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT |
| Manufacturer | Central Semiconductor | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | N | N |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-39-3 | TO-39-3 | TO-39-3 |
| Transistor Polarity | NPN | NPN | NPN |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 80 V | 80 V | 80 V |
| Collector Base Voltage VCBO | 140 V | 140 V | 140 V |
| Emitter Base Voltage VEBO | 7 V | 7 V | 7 V |
| Collector Emitter Saturation Voltage | 500 mV | 200 mV | 0.5 V |
| Maximum DC Collector Current | 1 A | 1 A | 1 A |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Maximum Operating Temperature | + 200 C | + 200 C | + 200 C |
| Series | 2N3019 | - | - |
| Height | 6.6 mm | - | - |
| Length | 9.4 mm | - | - |
| Packaging | Bulk | Bulk | Reel |
| Width | 9.4 mm | - | - |
| Brand | Central Semiconductor | Microchip / Microsemi | Microchip / Microsemi |
| Continuous Collector Current | 1 A | - | - |
| DC Collector/Base Gain hfe Min | 40 at 150 mA, 10 V | - | 15 at 1 A, 10 V |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 500 | 1 | 100 |
| Subcategory | Transistors | Transistors | Transistors |
| Part # Aliases | 2N3019 PBFREE | - | - |
| Technology | - | Si | Si |
| Minimum Operating Temperature | - | - 65 C | - 65 C |
| Pd Power Dissipation | - | 800 mW | 800 mW |
| DC Current Gain hFE Max | - | - | 300 at 500 mA, 10 V |